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Electrical resistivity studies on ZrxTb1-xFe3 (x = 0.2, 0.3) hydrides

Author
SIVAKUMAR, R1 ; RAMAPRABHU, S1 ; RAMA RAO, K. V. S1
[1] Alternative Energy, Magnetism and Magnetic Materials Laboratory, Department of Physics. Indian Institute of Technology, Madras-600 036, India
Source

Journal of physics. Condensed matter (Print). 2001, Vol 13, Num 18, pp 4155-4164 ; ref : 17 ref

CODEN
JCOMEL
ISSN
0953-8984
Scientific domain
Crystallography; Metallurgy, welding; Condensed state physics
Publisher
Institute of Physics, Bristol
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Absorption Cinétique Composé quaternaire Conductivité électrique Effet composition Effet pression Electron conduction Etude expérimentale Fer hydrure Hydrogène Microstructure Site cristallographique Terbium hydrure Zirconium hydrure H Fe Tb Zr Métal transition composé
Keyword (en)
Absorption Kinetics Quaternary compounds Electrical conductivity Composition effect Pressure effects Conduction electron Experimental study Iron hydrides Hydrogen Microstructure Crystallographic site Terbium hydrides Zirconium hydrides Transition element compounds
Keyword (es)
Efecto composición Electrón conducción Sitio cristalográfico
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A40 Treatment of materials and its effects on microstructure and properties / 001B80A40R Electrical and magnetic properties (related to treatment conditions)

Pacs
8140R Electrical and magnetic properties (related to treatment conditions)

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
1021601

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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