Paper surface modification by plasma deposition of double layers of organic silicon compounds
- Author
- TAN, Ing H1 ; DA SILVA, Maria Lucia P2 ; DEMARQUETTE, Nicole R1
[1] Escola Politecnica da Universidade de São Paulo, Depto. de Engenharia Metalurgica e de Materiais, Av. Prof. Mello Moraes 2463, CEP 05508-900 São Paulo, S.P., Brazil
[2] Depto. de Engenharia Eletrica, Av. Luciano Gualberto, no. 158 - trav. 3, 05508-900 São Paulo, SP, Brazil - Source
Journal of material chemistry. 2001, Vol 11, Num 4, pp 1019-1025 ; ref : 22 ref
- Publisher
- Royal Society of Chemistry, Cambridge
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Dépôt plasma Etude expérimentale Fabrication Hydrophobisation Papier Silazane organique Silicate organique Silicium Composé organique Traitement surface Disilazane(hexaméthyl) Silane(tétraéthoxy)
- Keyword (en)
- Plasma deposition Experimental study Manufacturing Hydrophobization Paper Organic silazane Organic silicate Silicon Organic compounds Surface treatment
- Keyword (es)
- Depósito plasma Estudio experimental Fabricación Hidrofobización Papel Silazano orgánico Silicato orgánico Silicio Compuesto orgánico Tratamiento superficie
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D10 Polymer industry, paints, wood / 001D10C Wood. Paper. Non wovens / 001D10C03 Paper, paperboard, non wovens / 001D10C03C Paper and paperboard manufacturing
- Discipline
- Polymer industry, paints, wood
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1035895
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1039/b008050k 
https://dx.doi.org/10.1039/b008050k
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