Cadmium zinc telluride and its use as a nuclear radiation detector material
- Author
- SCHLESINGER, T. E1 ; TONEY, J. E2 ; YOON, H3 ; LEE, E. Y4 ; BRUNETT, B. A4 ; FRANKS, L4 ; JAMES, R. B4
[1] Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, United States
[2] Spire Corporation, Bedford, MA, United States
[3] Spectrolab, Inc., Sylmar, CA, United States
[4] Sandia National Laboratories, Livermore, CA, United States - Source
Materials science & engineering. R, Reports. 2001, Vol 32, Num 4-5, pp 103-189 ; ref : 268 ref
- ISSN
- 0927-796X
- Scientific domain
- Crystallography; Mechanics acoustics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Article
- Language
- English
- Keyword (fr)
- Cadmium tellurure Caractéristique courant tension Composé ternaire Croissance cristalline Défaut cristallin Détecteur rayonnement Etat défaut Etude expérimentale Fonction réponse Matériau semiconducteur Photoluminescence Phénomène transport Rayonnement nucléaire Zinc tellurure Caractérisation matériau Cd Te Zn Cd(1-x)Zn(x)Te Matériau capteur Composé minéral Métal transition composé
- Keyword (en)
- Cadmium tellurides IV characteristic Ternary compounds Crystal growth Crystal defects Radiation detectors Defect states Experimental study Response functions Semiconductor materials Photoluminescence Transport processes Nuclear radiation Zinc tellurides Inorganic compounds Transition element compounds
- Keyword (es)
- Radiación nuclear
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B20 Nuclear physics / 001B20I Experimental methods and instrumentation for elementary-particle and nuclear physics / 001B20I40 Radiation detectors, dosimeters / 001B20I40W Solid-state detectors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels / 001B70A55G Ii-vi semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence / 001B70H55E Ii-vi semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy
- Discipline
- Nuclear physics Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1064100
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0927-796X(01)00027-4 
https://dx.doi.org/10.1016/S0927-796X(01)00027-4
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