(0001) oriented GaN epilayer grown on (1 1 2 0) sapphire by MOCVD
- Author
- BAI, J1 2 ; WANG, T3 ; LI, H. D2 ; JIANG, N1 ; SAKAI, S1 2
[1] Department of Electrical and Electronic Engineering, University of Tokushima, 2-1 Minamijosanjima, Tokushima 770-8506, Japan
[2] Satellite Venture Business Laboratory, University of Tokushima, Minami-josanjima, Tokushima 770-8506, Japan
[3] Nitride Semiconductors, Tokushima, Japan - Source
Journal of crystal growth. 2001, Vol 231, Num 1-2, pp 41-47 ; ref : 19 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aire sélective Couche épitaxique Croissance cristalline en phase vapeur Diffraction RX Diffraction électron Etude expérimentale Gallium nitrure Haute résolution Hétéroépitaxie Matériau semiconducteur Méthode MOCVD Orientation cristalline Paramètre cristallin Relation orientation Semiconducteur III-V TEM Ga N GaN Substrat saphir Composé minéral Nitrure
- Keyword (en)
- Selective area Epitaxial layers Crystal growth from vapors XRD Electron diffraction Experimental study Gallium nitrides High-resolution methods Heteroepitaxy Semiconductor materials MOCVD Crystal orientation Lattice parameters Orientation relation III-V semiconductors TEM Inorganic compounds Nitrides
- Keyword (es)
- Heteroepitaxia Relación orientación
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1064876
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0022-0248(01)01443-9 
https://dx.doi.org/10.1016/S0022-0248(01)01443-9
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