Thermoelastic effect of silicon for strain sensing
- Author
- YONGCHUL AHN1 ; GUCKEL, Henry1
[1] Wisconsin Center for Applied Microelectronics, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1410 Engineering Drive, Madison, WI 53706, United States - Source
Journal of micromechanics and microengineering (Print). 2001, Vol 11, Num 5, pp 443-451 ; ref : 19 ref
- ISSN
- 0960-1317
- Scientific domain
- Electronics; Mechanical engineering
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Appareillage essai Bande conduction Capteur mesure Equation Boltzmann Equation transport Etude expérimentale Mesure déformation Modélisation Silicium Tension induite Thermoélasticité
- Keyword (en)
- Testing equipment Conduction band Measurement sensor Boltzmann equation Transport equation Experimental study Deformation measurement Modeling Silicon Induced voltage Thermoelasticity
- Keyword (es)
- Aparato ensayo Banda conducción Captador medida Ecuación Boltzmann Ecuación transporte Estudio experimental Medición deformación Modelización Silicio Voltaje inducido Termoelasticidad
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00E Statistical physics, thermodynamics, and nonlinear dynamical systems / 001B00E60 Transport processes
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40F Solid mechanics / 001B40F30 Structural and continuum mechanics / 001B40F30R Measurement and testing methods
- Discipline
- Physics : solid mechanics Theoretical physics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1086495
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0960-1317/11/5/302 
https://dx.doi.org/10.1088/0960-1317/11/5/302
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0960-1317\/11\/5\/302\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:50:\"Thermoelastic effect of silicon for strain sensing\";s:9:\"\u0000*\u0000jtitle\";s:54:\"Journal of micromechanics and microengineering (Print)\";s:9:\"\u0000*\u0000stitle\";s:31:\"J. micromech. microeng. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2001\";s:9:\"\u0000*\u0000volume\";s:2:\"11\";s:8:\"\u0000*\u0000issue\";s:1:\"5\";s:8:\"\u0000*\u0000spage\";s:3:\"443\";s:8:\"\u0000*\u0000epage\";s:3:\"451\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0960-1317\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:12:\"YONGCHUL AHN\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:13:\"GUCKEL, Henry\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:50:\"Thermoelastic effect of silicon for strain sensing\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0960-1317\/11\/5\/302\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:50:\"Thermoelastic effect of silicon for strain sensing\";s:9:\"\u0000*\u0000jtitle\";s:54:\"Journal of micromechanics and microengineering (Print)\";s:9:\"\u0000*\u0000stitle\";s:31:\"J. micromech. microeng. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2001\";s:9:\"\u0000*\u0000volume\";s:2:\"11\";s:8:\"\u0000*\u0000issue\";s:1:\"5\";s:8:\"\u0000*\u0000spage\";s:3:\"443\";s:8:\"\u0000*\u0000epage\";s:3:\"451\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0960-1317\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:12:\"YONGCHUL AHN\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:13:\"GUCKEL, Henry\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:50:\"Thermoelastic effect of silicon for strain sensing\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0960-1317\/11\/5\/302\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0960-1317\/11\/5\/302\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:50:\"Thermoelastic effect of silicon for strain sensing\";s:9:\"\u0000*\u0000jtitle\";s:54:\"Journal of micromechanics and microengineering (Print)\";s:9:\"\u0000*\u0000stitle\";s:31:\"J. micromech. microeng. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2001\";s:9:\"\u0000*\u0000volume\";s:2:\"11\";s:8:\"\u0000*\u0000issue\";s:1:\"5\";s:8:\"\u0000*\u0000spage\";s:3:\"443\";s:8:\"\u0000*\u0000epage\";s:3:\"451\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0960-1317\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:12:\"YONGCHUL AHN\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:13:\"GUCKEL, Henry\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:50:\"Thermoelastic effect of silicon for strain sensing\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0960-1317\/11\/5\/302\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:50:\"Thermoelastic effect of silicon for strain sensing\";s:9:\"\u0000*\u0000jtitle\";s:54:\"Journal of micromechanics and microengineering (Print)\";s:9:\"\u0000*\u0000stitle\";s:31:\"J. micromech. microeng. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2001\";s:9:\"\u0000*\u0000volume\";s:2:\"11\";s:8:\"\u0000*\u0000issue\";s:1:\"5\";s:8:\"\u0000*\u0000spage\";s:3:\"443\";s:8:\"\u0000*\u0000epage\";s:3:\"451\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0960-1317\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:12:\"YONGCHUL AHN\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:13:\"GUCKEL, Henry\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:50:\"Thermoelastic effect of silicon for strain sensing\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0960-1317\/11\/5\/302\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:50:\"Thermoelastic effect of silicon for strain sensing\";s:9:\"\u0000*\u0000jtitle\";s:54:\"Journal of micromechanics and microengineering (Print)\";s:9:\"\u0000*\u0000stitle\";s:31:\"J. micromech. microeng. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"2001\";s:9:\"\u0000*\u0000volume\";s:2:\"11\";s:8:\"\u0000*\u0000issue\";s:1:\"5\";s:8:\"\u0000*\u0000spage\";s:3:\"443\";s:8:\"\u0000*\u0000epage\";s:3:\"451\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0960-1317\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:12:\"YONGCHUL AHN\";s:10:\"\u0000*\u0000aufirst\";s:0:\"\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:13:\"GUCKEL, Henry\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:50:\"Thermoelastic effect of silicon for strain sensing\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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