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Anodic and optical characterisation of stain-etched porous silicon antireflection coatings

Author
GUERRERO-LEMUS, R1 ; HERNANDEZ-RODRIGUEZ, C1 ; BEN-HANDER, F2 ; MARTINEZ-DUART, J. M2
[1] Departamento de Física Básica, Facultad de Física, Universidad de La Laguna, 38204 SIC de Tenerife, Spain
[2] Departamento de Física Aplicada, C-XII, Universidad Autónoma de Madrid, 28049 Madrid, Spain
Conference title
EMRS 2001 Symposium E: Crystalline Silicon for Solar Cells
Conference name
EMRS 2001 Symposium E (Strasbourg 2001-06-05)
Author (monograph)
KITTLER, M (Editor); MARTINUZZI, S (Editor); KOCH, W (Editor); BRUTON, T (Editor)
European Materials Research Society, Strasbourg, France (Funder/Sponsor)
Source

Solar energy materials and solar cells. 2002, Vol 72, Num 1-4, pp 495-501 ; ref : 10 ref

ISSN
0927-0248
Scientific domain
General chemistry, physical chemistry; Energy
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Keyword (fr)
Cellule solaire Fluorhydrique acide Matériau cristallin Matériau poreux Mordançage Nitrique acide Silicium
Keyword (en)
Solar cell Hydrofluoric acid Crystalline material Porous material Etching Nitric acid Silicon
Keyword (es)
Célula solar Ácido fluorhídrico Material cristalino Material poroso Mordentado Nítrico ácido Silicio
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D06 Energy / 001D06C Natural energy / 001D06C02 Solar energy / 001D06C02D Photovoltaic conversion / 001D06C02D1 Solar cells. Photoelectrochemical cells

Discipline
Energy
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
13515942

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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