Thermal stability of AuPt/n--GaAs Schottky contacts
- Author
- MACHAC, P1 ; PERINA, V2
[1] Institute of Chemical Technology, Technická 5, 166 28 Prague, Czech Republic
[2] Nuclear Physics Institute of Academy Sciences, 250 68 Rez near Prague, Czech Republic - Source
Journal of materials science. Materials in electronics. 2002, Vol 13, Num 5, pp 273-275 ; ref : 7 ref
- ISSN
- 0957-4522
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Springer, Norwell, MA
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Alliage binaire Barrière Schottky Caractéristique courant tension Composé binaire Contact ohmique Gallium arséniure Hauteur barrière Idéalité Or alliage Platine alliage Recuit thermique rapide Stabilité thermique Alliage AuPt As Ga Au Pt GaAs
- Keyword (en)
- Binary alloy Schottky barrier Voltage current curve Binary compound Ohmic contact Gallium arsenides Barrier height Ideality Gold alloy Platinum alloy Rapid thermal annealing Thermal stability
- Keyword (es)
- Aleación binaria Barrera Schottky Característica corriente tensión Compuesto binario Contacto óhmico Altura barrera Idealidad Oro aleación Platino aleación Recocido térmico rápido Estabilidad térmica
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 13724784
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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