The transient exclusion effect in intrinsic semiconductors
- Author
- MALYUTENKO, V. K1 ; VAINBERG, V. V1 ; TESLENKO, G. I1 ; MALYUTENKO, O. Yu1 ; PULTORAK, J2
[1] Institute of Semiconductor Physics, 03028 Kiev, Ukraine
[2] Institute of Electron Technology, 02-668 Warsaw, Poland - Source
Semiconductor science and technology. 2002, Vol 17, Num 10, pp 1058-1063 ; ref : 16 ref
- CODEN
- SSTEET
- ISSN
- 0268-1242
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Champ intense Contact ohmique Distribution charge électronique Domaine électrique Effet champ électrique Germanium Génération porteur charge Limite absorption Modélisation Phénomène transitoire Porteur charge Relaxation Répartition spatiale Semiconducteur Surface contact Ge
- Keyword (en)
- High field Ohmic contacts Electron charge distribution Electric domains Electric field effects Germanium Charge carrier generation Absorption edge Modelling Transients Charge carriers Relaxation Spatial distribution Semiconductor materials Contact surface
- Keyword (es)
- Distribución carga electrónica Generación portador carga Superficie contacto
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators / 001B70B20J Charge carriers: generation, recombination, lifetime, and trapping
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 13948672
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0268-1242/17/10/304 
https://dx.doi.org/10.1088/0268-1242/17/10/304
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