Assessment of a high resolution centered scheme for the solution of hydrodynamical semiconductor equations
- Author
- ANILE, A. Marcello1 ; NIKIFORAKIS, Nikolaos2 ; PIDATELLA, Rosa M1
[1] Dipartimento di Matematica, Universitá di Catania, viale A. Doria, 6-95125 Catania, Italy
[2] Department of Applied Mathematics and Theoretical Physics, University of Cambridge, Silver Street, Cambridge CB3 9EW, United Kingdom - Source
SIAM journal on scientific computing (Print). 2001, Vol 22, Num 5, pp 1533-1548 ; ref : 37 ref
- CODEN
- SJOCE3
- ISSN
- 1064-8275
- Scientific domain
- Computer science; Mathematics
- Publisher
- Society for Industrial and Applied Mathematics, Philadelphia, PA
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Chenal Conservation Densité électron Diode Discontinu Dispositif semiconducteur Electron chaud Entropie Equation Boltzmann Equation Euler Equation Poisson Equation différentielle Equation dérivée partielle Equation transport Evolution Fermeture Haute résolution Jonction Loi conservation Métal Méthode analytique Onde Pente Problème valeur initiale Problème valeur limite Propagation Régime permanent Semiconducteur Simulation numérique Solution analytique Solution exacte Solution numérique Source Système hyperbolique Système équation Terme source Transistor effet champ Transport énergie Transport
- Keyword (en)
- Channel Conservation Electron density Diode Discontinuous Semiconductor device Hot electron Entropy Boltzmann equation Euler equation Poisson equation Differential equation Partial differential equation Transport equation Evolution Closure High resolution Junction Conservation law Metal Analytical method Wave Slope Initial value problem Boundary value problem Propagation Steady state Semiconductor materials Numerical simulation Analytical solution Exact solution Numerical solution Source Hyperbolic system Equation system Source terms Field effect transistor Energy transport Transport
- Keyword (es)
- Canal Conservación Densidad electrón Diodo Discontinuo Dispositivo semiconductor Electrón caliente Entropía Ecuación Boltzmann Ecuación Euler Ecuación Poisson Ecuación diferencial Ecuación derivada parcial Ecuación transporte Evolución Cerradura Alta resolucion Reunión Ley conservación Metal Método analítico Onda Pendiente Problema valor inicial Problema valor limite Propagación Régimen permanente Semiconductor(material) Simulación numérica Solución analítica Solución exacta Fuente Sistema hiperbólico Sistema ecuación Transistor efecto campo Transporte energía Transporte
- Classification
- Pascal
- 001 Exact sciences and technology / 001A Sciences and techniques of general use / 001A02 Mathematics / 001A02I Numerical analysis. Scientific computation / 001A02I01 Numerical analysis / 001A02I01C Numerical simulation
- Pascal
- 001 Exact sciences and technology / 001A Sciences and techniques of general use / 001A02 Mathematics / 001A02I Numerical analysis. Scientific computation / 001A02I01 Numerical analysis / 001A02I01J Partial differential equations, initial value problems and time-dependant initial-boundary value problems
- Discipline
- Mathematics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 14071479
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1137/S1064827599361588 
https://dx.doi.org/10.1137/S1064827599361588
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