Quantitative spectroscopy of substitutional nitrogen in GaAs1-xNx epitaxial layers by local vibrational mode absorption
- Author
- ALT, Hans Christian1 ; GOMENIUK, Yuri1 ; EBBINGHAUS, Gerhard2 ; RAMAKRISHNAN, Arun2 ; RIECHERT, Henning2
[1] Engineering Physics Department, FHM-Munich University of Applied Sciences, Postfach 20 01 13, 80001 München, Germany
[2] Infineon Technologies, Otto-Hahn-Ring 6, 81730 München, Germany - Source
Semiconductor science and technology. 2003, Vol 18, Num 4, pp 303-306, 4 p ; ref : 24 ref
- CODEN
- SSTEET
- ISSN
- 0268-1242
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Arsenic Nitrure Composé binaire Couche mince Couche épitaxique Diffraction RX Epaisseur Epitaxie jet moléculaire Etude expérimentale Gallium nitrure Mode localisé Mode vibration Méthode MOCVD Semiconducteur III-V Spectre IR Spectre SIMS Spectre absorption Transformation Fourier As Ga n GaAs1-xNx Composé minéral
- Keyword (en)
- Arsenic Nitrides Binary compounds Thin films Epitaxial layers XRD Thickness Molecular beam epitaxy Experimental study Gallium nitrides Localized modes Vibrational modes MOCVD III-V semiconductors Infrared spectra Secondary ion mass spectra Absorption spectra Fourier transformation Inorganic compounds
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H40 Visible and ultraviolet spectra / 001B70H40F Semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Pacs
- 7840F Semiconductors
- Discipline
- Physics and materials science Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 14638994
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0268-1242/18/4/319 
https://dx.doi.org/10.1088/0268-1242/18/4/319
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