Negative contrast IR emitting device based on the carrier contact exclusion
- Author
- MALYUTENKO, V. K1 ; VAINBERG, V. V1 ; TESLENKO, G. I1 ; MALYUTENKO, O. Yu1 ; PULTORAK, J2
[1] Institute of Semiconductor Physics, 03028 Kiev, Ukraine
[2] Institute of Electron Technology, 02-668 Warsaw, Poland - Source
Semiconductor science and technology. 2003, Vol 18, Num 7, pp 697-702, 6 p ; ref : 11 ref
- CODEN
- SSTEET
- ISSN
- 0268-1242
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Densité porteur charge Dopage Etat impureté Etude expérimentale Germanium Limite absorption Modulation Rayonnement IR Semiconducteur bande interdite large Ge
- Keyword (en)
- Charge carrier density Doping Impurity states Experimental study Germanium Absorption edge Modulation Infrared radiation Wide band gap semiconductors
- Keyword (es)
- Concentración portador carga Doping Estudio experimental Germanio Límite absorción Modulación Radiación infrarroja
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 14879002
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0268-1242/18/7/318 
https://dx.doi.org/10.1088/0268-1242/18/7/318
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