IR study of exclusion-accumulation effects enhanced by the geometrical factor
- Author
- MALYUTENKO, V. K1 ; TESLENKO, G. I1 ; VAINBERG, V. V1 ; PIOTROWSKI, T2 ; PULTORAK, J2
[1] Institute of Semiconductor Physics, Kiev 28, Ukraine
[2] Institute of Electron Technology, 02-668 Warszawa, Poland - Source
Semiconductor science and technology. 2000, Vol 15, Num 11, pp 1054-1060 ; ref : 7 ref
- CODEN
- SSTEET
- ISSN
- 0268-1242
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Contact ohmique Contact électrique Densité porteur charge Distribution concentration Etude expérimentale Etude théorique Facteur géométrique Imagerie IR Jonction p p+ Rayonnement IR
- Keyword (en)
- Ohmic contacts Electric contacts Carrier density Concentration distribution Experimental study Theoretical study Geometrical factor Infrared imaging p p+ junction Infrared radiation
- Keyword (es)
- Distribución concentración Factor geométrico Unión p p+
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C40 Electronic transport in interface structures / 001B70C40C Contact resistance, contact potential
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1535752
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0268-1242/15/11/308 
https://dx.doi.org/10.1088/0268-1242/15/11/308
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