Optical absorption and band gap shift of n-doped AlxGa1-xAs alloys grown by MBE
- Author
- FERREIRA DA SILVA, A1 ; PERSSON, C1 ; BERGGREN, K.-F1 ; PEPE, I2 ; SANTOS ALVES, A2 ; DE OLIVEIRA, A. G3
[1] Linköping University, Department of Physics and Measurement Technology, 581 83 Linköping, Sweden
[2] Instituto de Física, Universidade Federal da Bahia, 40210-340 Salvador, Bahia, Brazil
[3] Departamento de Física-ICEx, Universidade Federal de Minas Gerais, 30161-970 Belo Horizonte, MG, Brazil - Conference title
- LDSD'97
- Conference name
- LDSD'97: International Conference on Low Dimensional Structures and Devices (2 ; Lisbon 1997-05-19)
- Author (monograph)
- HENINI, Mohamed (Editor)1
[1] University of Nottingham, United Kingdom - Source
Microelectronic engineering. 1998, Vol 43-44, pp 423-429 ; ref : 17 ref
- CODEN
- MIENEF
- ISSN
- 0167-9317
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Absorption optique Aluminium Arséniure Aluminium Circuit intégré Composé III-V Composé ternaire Diffraction électron réflexion Fabrication microélectronique Gallium Arséniure Modèle théorique Niveau énergie Propriété optique Propriété électronique Silicium Transition Mott Al As Ga AlxGa1-xAs Epitaxie faisceau chimique
- Keyword (en)
- Optical absorption Aluminium Arsenides Aluminium Integrated circuit III-V compound Ternary compound Reflection high energy electron diffraction Microelectronic fabrication Gallium Arsenides Theoretical model Energy level Optical properties Electronic properties Silicon Mott transition
- Keyword (es)
- Absorción óptica Aluminio Arseniuro Aluminio Circuito integrado Compuesto III-V Compuesto ternario Difracción electrón reflexión Fabricación microeléctrica Galio Arseniuro Modelo teórico Nivel energía Propiedad óptica Propiedad electrónica Silicio Transición Mott
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C61 Electrical properties of specific thin films / 001B70C61E Iii-v semiconductors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Discipline
- Electronics Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1586710
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0167-9317(98)00201-9 
https://dx.doi.org/10.1016/S0167-9317(98)00201-9
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