The effect of germanium doping on oxygen donors in Czochralski-grown silicon
- Author
- HONG LI1 ; DEREN YANG1 ; XUEGONG YU1 ; XIANGYANG MA1 ; DAXI TIAN1 ; LIBEN LI1 ; DUANLIN QUE1
[1] State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China - Source
Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 32, pp 5745-5750, 6 p ; ref : 20 ref
- CODEN
- JCOMEL
- ISSN
- 0953-8984
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Addition germanium Addition oxygène Centre donneur Dopage Défaut ponctuel Etat défaut Impureté Non stoechiométrie Précipitation Recuit thermique Silicium Ge Si
- Keyword (en)
- Germanium additions Oxygen additions Donor center Doping Point defects Defect states Impurities Nonstoichiometry Precipitation Thermal annealing Silicon
- Keyword (es)
- Centro dador Doping Recocido térmico
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels / 001B70A55C Elemental semiconductors
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16002475
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0953-8984/16/32/011 
https://dx.doi.org/10.1088/0953-8984/16/32/011
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