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Morphology and optical properties of amorphous ZnS films deposited by ultrasonic-assisted successive ionic layer adsorption and reaction method

Author
GAO, X. D1 ; LI, X. M1 ; YU, W. D1
[1] State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics of Chinese Academy of Sciences, No. 1295, Dingxi Road, Shanghai 200050, China
Source

Thin solid films. 2004, Vol 468, Num 1-2, pp 43-47, 5 p ; ref : 26 ref

CODEN
THSFAP
ISSN
0040-6090
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Elsevier Science, Lausanne
Publication country
Switzerland
Document type
Article
Language
English
Author keyword
68.55 78.67Bf Successive ionic layer adsorption and reaction (SILAR) 81.15Lm Morphology Optical properties Zinc sulfide
Keyword (fr)
Adsorption Composé binaire Couche mince Etude expérimentale Facteur transmission Grosseur grain Matériau amorphe Morphologie Méthode SILAR Méthode phase vapeur Méthode ultrasonore Précurseur Préparation Pulvérisation faisceau ionique Semiconducteur II-VI Structure lamellaire Zinc sulfure S Zn Substrat Si Substrat verre ZnS Composé minéral Métal transition composé
Keyword (en)
Adsorption Binary compounds Thin films Experimental study Transmittance Grain size Amorphous material Morphology Successive ionic layer adsorption and reaction method Growth from vapor Ultrasonic method Precursor Preparation Ion beam sputtering II-VI semiconductors Lamellar structure Zinc sulfides Inorganic compounds Transition element compounds
Keyword (es)
Factor transmisión Material amorfo Método fase vapor Método ultrasonoro Preparación Pulverización haz iónico Estructura lamelar
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness

Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H40 Visible and ultraviolet spectra / 001B70H40F Semiconductors

Pacs
6855J Structure and morphology; thickness

Pacs
7840F Semiconductors

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16164636

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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