Thermal instability of effective work function in metal/high-κ stack and its material dependence
- Author
- MOON SIG JOO1 ; BYUNG JIN CHO1 ; BALASUBRAMANIAN, N2 ; KWONG, Dim-Lee3
[1] Department of Electrical and Computer Engineering, Silicon Nano Device Laboratory, National University of Singapore, Singapore 119260, Singapore
[2] Institute of Microelectronics, Singapore 117685, Singapore
[3] Department of Electrical and Computer Engineering, The University of Texas, Austin, TX 78712, United States - Source
IEEE electron device letters. 2004, Vol 25, Num 11, pp 716-718, 3 p ; ref : 12 ref
- CODEN
- EDLEDZ
- ISSN
- 0741-3106
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Fermi-level pinning high-κ metal gate thermal instability work function
- Keyword (fr)
- Accepteur Donneur Etat interface Instabilité thermique Interface diélectrique métal Liaison métallique Matériau électrode Niveau Fermi Recuit thermique Travail sortie Diélectrique permittivité élevée
- Keyword (en)
- Acceptors Donor Interface state Thermal instability Dielectric metal interface Metallic bond Electrode material Fermi level Thermal annealing Work function High k dielectric
- Keyword (es)
- Donador Estado interfase Inestabilidad térmica Interfase dieléctrica metal Enlace metálico Material electrodo Nivel Fermi Recocido térmico Función de trabajo Dieléctrico alta constante dieléctrica
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16196547
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/LED.2004.836763 
https://dx.doi.org/10.1109/LED.2004.836763
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