Shallow-donor wave functions and donor-pair exchange in silicon: Ab initio theory and floating-phase Heitler-London approach
- Author
- KOILLER, Belita1 ; CAPAZ, R. B1 ; XUEDONG HU2 ; DAS SARMA, S3
[1] Instituto de Fisica, Universidade Federal do Rio de Janeiro, 21945 Rio de Janeiro, Brazil
[2] Department of Physics, University at Buffalo, the State University of New York, Buffalo, New York 14260-1500, United States
[3] Condensed Matter Theory Center, Department of Physics, University of Maryland, College Park, Maryland 20742-4111, United States - Source
Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 11, pp 115207.1-115207.8 ; ref : 46 ref
- ISSN
- 1098-0121
- Scientific domain
- Metallurgy, welding; Condensed state physics
- Publisher
- American Physical Society, Ridge, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Approximation Heitler London Calcul ab initio Centre donneur Distribution charge électronique Fonction enveloppe Fonction onde Interaction échange Méthode fonctionnelle densité Niveau peu profond Oscillation Pseudopotentiel Semiconducteur Silicium Si
- Keyword (en)
- Heitler London approximation Ab initio calculations Donor center Electron charge distribution Envelope function Wave functions Exchange interactions Density functional method Shallow level Oscillations Pseudopotential Semiconductor materials Silicon
- Keyword (es)
- Aproximación Heitler Centro dador Distribución carga electrónica Función envolviente Nivel poco profundo
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels / 001B70A55C Elemental semiconductors
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16304930
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1103/PhysRevB.70.115207 
https://dx.doi.org/10.1103/PhysRevB.70.115207
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