Analytical model of high-frequency noise spectrum in Schottky-Barrier diodes
- Author
- SHIKTOROV, P1 ; STARIKOV, E1 2 ; GRUZINSKIS, V1 ; REGGIANI, L3 ; VARANI, L4 ; VAISSIERE, J. C4
[1] Semiconductor Physics Institute, Vilnius 2600, Lithuania
[2] CEM2-Centre d'Electronique et de Micro-optoelectronique de Montpellier (CNRS UMR 5507), Montpellier 3409, France
[3] INFM-National Nanotechnology Laboratory, Dipartimento di Ingegneria de'll Innovazione, Università di Lecce, Lecce 73100, Italy
[4] CEM2-Centre d'Electronique et de Micro-optoelectronique de Montpellier (CNRS UMR 5507), Montpellier 34095, France - Source
IEEE electron device letters. 2005, Vol 26, Num 1, pp 2-4, 3 p ; ref : 8 ref
- CODEN
- EDLEDZ
- ISSN
- 0741-3106
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- High-frequency noise Schottky-barrier diodes terahertz (THz) radiation
- Keyword (fr)
- Champ autocohérent Diode barrière Schottky Etude comparative Haute fréquence Méthode Monte Carlo Méthode analytique Spectre bruit Spectre fréquence Simulation numérique
- Keyword (en)
- Self-consistent field Schottky barrier diode Comparative study High frequency Monte Carlo method Analytical method Noise spectrum Frequency spectrum Numerical simulation
- Keyword (es)
- Diodo barrera Schottky Estudio comparativo Alta frecuencia Método Monte Carlo Método analítico Espectro ruido Espectro frecuencia Simulación numérica
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F03 Diodes
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16458753
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/LED.2004.840396 
https://dx.doi.org/10.1109/LED.2004.840396
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