Effect of silicon nitride PECVD growth on AlGaN/GaN HEMT dispersion and breakdown characteristics
- Author
- FITCH, Robert1 ; GILLESPIE, James1 ; VIA, Dave1 ; AGRESTA, Don1 ; JENKINS, Thomas1 ; JESSEN, Gregg1 ; MOSER, Neil1 ; CRESPO, Antonio1 ; DABIRAN, Amir2 ; OSINSKY, Andrea2
[1] Air Force Research Laboratory, 2241 Avionics Circle, Wright-Patterson AFB, Ohio, United States
[2] SVT Associates, 7620 Executive Drive, Eden Prairie, MN, United States - Conference title
- State-of-the-art program on compound semiconductors XLI = Nitride and wide bandgap semiconductors for sensors, photonics, and electronics V (Honolulu HI, 3-8 October 2004) (en)
- Conference name
- Nitride and wide bandgap semiconductors for sensors, photonics, and electronics. Symposium (5 ; Honolulu HI 2004-10-03) = State-of-the-art program on compound semiconductors. Symposium (41 ; Honolulu HI 2004-10-03)
- Author (monograph)
- Ng, H.M (Editor); Baca, A.G (Editor)
Electrochemical Society, Electronics Division, Pennington NJ, United States (Organiser of meeting) - Source
Proceedings - Electrochemical Society. 2004, pp 459-464, 6 p ; ref : 3 ref
- ISSN
- 0161-6374
- ISBN
- 1-56677-419-5
- Scientific domain
- General chemistry, physical chemistry; Crystallography; Electronics; Electrical engineering; Energy; Condensed state physics; Physics
- Publisher
- Electrochemical Society, Pennington NJ
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Aluminium nitrure Composé binaire Composé ternaire Endommagement Fabrication microélectronique Gallium nitrure Méthode PECVD Passivation Procédé fabrication Silicium nitrure Transistor mobilité électron élevée Al Ga N AlGaN Ga N GaN N Si Si3N4 Si
- Keyword (en)
- Aluminium nitride Binary compound Ternary compound Damaging Microelectronic fabrication Gallium nitride PECVD Passivation Manufacturing process Silicon nitride High electron mobility transistor
- Keyword (es)
- Aluminio nitruro Compuesto binario Compuesto ternario Deterioración Fabricación microeléctrica Galio nitruro Pasivación Procedimiento fabricación Silicio nitruro Transistor movibilidad elevada electrones
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16545707
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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