Formation and stability of Ni(Pt)Si/poly-Si layered structure
- Author
- SANTOS, Regis E1 2 ; DOI, Ioshiaki1 2 ; TEIXEIRA, Ricardo C1 2 ; DINIZ, José A1 2 ; SWART, Jacobus W1 2 ; DOS SANTOS, Sebastiao G3
[1] School of Electrical and Computer Engineering (FEEC), State University of Campinas (UNICAMP), P.O. Box. 6101, CEP 13083-852, Campinas-SP, Brazil
[2] Center for Semiconductor Components (CCS), State University of Campinas (UNICAMP), P.O. Box 6061, CEP 13083-970, Campinas-SP, Brazil
[3] Laboratory of Integrated Systems (LSI), Polytechnic School, University of São Paulo (USP), R. Luciano Gualberto, 158, CEP 05508900, S. Paulo-SP, Brazil - Conference title
- Microelectronics technology and devices SBMICRO 2004 (Porto de Galinhas Beach, 2004)
- Conference name
- International symposium on microelectronics technology and devices (19 ; 2004)
- Author (monograph)
- Santos, E.J.P (Editor); Ribas, R.P (Editor); Swart, J (Editor)
Electrochemical Society, Electronics Division, Pennington NJ, United States (Organiser of meeting) - Source
Proceedings - Electrochemical Society. 2004, pp 259-264, 6 p ; ref : 10 ref
- ISSN
- 0161-6374
- ISBN
- 1-56677-416-0
- Scientific domain
- General chemistry, physical chemistry; Electronics; Electrical engineering; Energy; Physics
- Publisher
- Electrochemical Society, Pennington NJ
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Caractéristique électrique Couche interfaciale Couche inversion Microscopie force atomique Microscopie électronique balayage Polycristal Recuit thermique rapide Rugosité Résistivité couche Sonde 4 pointes Structure interface Température recuit Valeur efficace
- Keyword (en)
- Electrical characteristic Interfacial layer Inversion layer Atomic force microscopy Scanning electron microscopy Polycrystal Rapid thermal annealing Roughness Sheet resistivity Four point probe Interface structure Annealing temperature Root mean square value
- Keyword (es)
- Característica eléctrica Capa interfacial Capa inversión Microscopía fuerza atómica Microscopía electrónica barrido Policristal Recocido térmico rápido Rugosidad Resistividad capa Sonda 4 puntas Estructura interfaz Temperatura recocido Valor eficaz
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16545775
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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