Physical analysis and modeling of plasma etching mechanism for ULSI application
- Author
- KANOH, M1 ; ONOUE, S1 ; NISHITANI, K1 ; SHINMURA, T1 ; IYANAGI, K1 ; KINOSHITA, S1 ; TAKAGI, S1
[1] Corporate Manufacturing Engineering Center, Toshiba Corporation, 33, Shin-Isogo-cho, Isogo-ku, Yokohama, Kanagawa, 235-0017, Japan - Conference title
- ULSI process integration III (Paris, 28 April - 2 May 2003)
- Conference name
- Symposium on ULSI process integration (3 ; Paris 2003-04-28)
- Author (monograph)
- Claeys, C.L (Editor); Gonzales, F (Editor); Murota, J (Editor); Fazan, P (Editor); Singh, R (Editor)
Electrochemical Society, Electronics Division, Pennington NJ, United States (Organiser of meeting) - Source
Proceedings - Electrochemical Society. 2003, pp 421-433, 13 p ; ref : 9 ref
- ISSN
- 0161-6374
- ISBN
- 1-56677-376-8
- Scientific domain
- General chemistry, physical chemistry; Electronics; Electrical engineering; Energy; Physics
- Publisher
- Electrochemical Society, Pennington NJ
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Circuit ULSI Circuit intégré Conditions opératoires Fabrication microélectronique Gravure ionique réactive Gravure plasma Microscopie électronique balayage Modélisation Rapport aspect Réaction surface Simulation plasma Trou interconnexion
- Keyword (en)
- ULSI circuit Integrated circuit Process conditions Microelectronic fabrication Reactive ion etching Plasma etching Scanning electron microscopy Modeling Aspect ratio Surface reaction Plasma simulation Via hole
- Keyword (es)
- Circuito ULSI Circuito integrado Condiciones operatorias Fabricación microeléctrica Grabado iónico reactivo Grabado plasma Microscopía electrónica barrido Modelización Relación dimensional Reacción superficie Agujero interconexión
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16546024
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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