Pascal and Francis Bibliographic Databases

Help

Export

Selection :

Permanent link
http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16546114

Electrical characterization of thin gate oxynitride obtained by N+ implantation into polysilicon/thermal oxide/silicon structure

Author
TOQUETTI, Leandro Z1 ; DOS SANTOS, Sebastiao G1 ; DINIZ, José A2 ; SWART, Jacobus W2 3
[1] University of São Paulo, LSI/PSI/EPUSP, Av. Prof. Luciano Gualberto, 158, trav.3, São Paulo, SP, CEP 05508-900, Brazil
[2] CCS, State University of Campinas, C.P 6061, CEP13083-970, Campinas, SP, Brazil
[3] FEEC, State University of Campinas, CEP13083-970, Campinas, SP, Brazil
Conference title
Microelectronics technology and devices SBMICRO 2004 (Porto de Galinhas Beach, 2004)
Conference name
International symposium on microelectronics technology and devices (19 ; 2004)
Author (monograph)
Santos, E.J.P (Editor); Ribas, R.P (Editor); Swart, J (Editor)
Electrochemical Society, Electronics Division, Pennington NJ, United States (Organiser of meeting)
Source

Proceedings - Electrochemical Society. 2004, pp 331-336, 6 p ; ref : 10 ref

ISSN
0161-6374
ISBN
1-56677-416-0
Scientific domain
General chemistry, physical chemistry; Electronics; Electrical engineering; Energy; Physics
Publisher
Electrochemical Society, Pennington NJ
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Capacité électrique Caractéristique électrique Densité charge Disruption électrique Défaillance Etat interface Fabrication microélectronique Implantation ion Microscopie électronique transmission Polycristal Tension amorçage
Keyword (en)
Capacitance Electrical characteristic Charge density Electric breakdown Failures Interface state Microelectronic fabrication Ion implantation Transmission electron microscopy Polycrystal Breakdown voltage
Keyword (es)
Capacitancia Característica eléctrica Densidad carga Disrupción eléctrica Fallo Estado interfase Fabricación microeléctrica Implantación ión Microscopía electrónica transmisión Policristal Voltaje perforación
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16546114

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

Searching the Web