New metal gate architecture achieved by chemical vapor deposition for a complete tunnel fill
- Author
- REGNIER, C1 ; WACQUANT, F1 ; LEVERD, F1 ; HARRISON, S2 ; CORONEL, P1 ; TAVEL, B3 ; SKOTNICKI, T1
[1] STMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, France
[2] L2MP, 42 rue Jolliot Curie, 13384 Marseille, France
[3] Philips Semiconductors, 850 rue Jean Monnet, 38926 Crolles, France - Conference title
- Advanced short-time thermal processing for Si-based CMOS devices (Paris, 27 April - 2 May 2003)
- Conference name
- International symposium on advanced short-time thermal processing for Si-based CMOS devices (Paris 2003-04-27)
- Author (monograph)
- Roozeboom, F (Editor); Gusev, E.P (Editor); Chen, L.J (Editor); Ozturk, M.C (Editor); Kwong, D.L (Editor); Timans, P.J (Editor)
Electrochemical Society, Electronics, Dielectric Science and technology, High Temperature Materials Division, Pennington NJ, United States (Organiser of meeting) - Source
Proceedings - Electrochemical Society. 2003, pp 391-396, 6 p ; ref : 8 ref
- ISSN
- 0161-6374
- ISBN
- 1-56677-396-2
- Scientific domain
- General chemistry, physical chemistry; Electronics; Electrical engineering; Energy; Physics
- Publisher
- Electrochemical Society, Pennington NJ
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Dépôt chimique phase vapeur Fabrication microélectronique Flexibilité Polycristal Transistor GAA Trou interconnexion
- Keyword (en)
- Chemical vapor deposition Microelectronic fabrication Flexibility Polycrystal GAA transistor Via hole
- Keyword (es)
- Depósito químico fase vapor Fabricación microeléctrica Flexibilidad Policristal Transistor GAA Agujero interconexión
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16546304
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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