Deep ultraviolet light emitting diodes using AlGaN quantum well active region
- Author
- ASIF KHAN, M1 ; SHATALOV, Maxim1 ; ADIVARAHAN, Vinod1 ; JAIN PING ZHANG1 ; CHITNIS, Ashay1 ; SIMIN, Grigory1 ; JINWEI YANG1
[1] Department of Electrical Engineering, University of South Carolina, Columbia, SC, 26208, United States - Conference title
- State-of-the-art program on compound semiconductors XXXVIII = Wide bandgap semiconductors for photonic and electronic devices and sensors III (Paris, 27 April - 2 May 2003) (en)
- Conference name
- State of the art program on compound semiconductors (38 ; Paris 2003-04-27) = Symposium on wide bandgap semiconductors for photonic and electronic devices and sensors (4 ; Paris 2003-04-27)
- Author (monograph)
- Stokes, E.B (Editor); Fitch, R.C (Editor); Chang, P.C (Editor); Merfeld, D.W (Editor); Ren, F (Editor)
Electrochemical Society, Electronics Division, Pennington NJ, United States (Organiser of meeting) - Source
Proceedings - Electrochemical Society. 2003, pp 152-157, 6 p ; ref : 19 ref
- ISSN
- 0161-6374
- ISBN
- 1-56677-349-0
- Scientific domain
- General chemistry, physical chemistry; Electronics; Electrical engineering; Energy; Physics
- Publisher
- Electrochemical Society, Pennington NJ
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Aluminium nitrure Aluminium oxyde Composé binaire Composé ternaire Diode électroluminescente Dislocation Epitaxie Gallium nitrure Hétérojonction Largeur raie Puissance sortie Puits quantique multiple Puits quantique Rayonnement UV extrême Rayonnement UV Région active Superréseau Température ambiante Al Ga N Al N AlGaN AlN Ga N GaN
- Keyword (en)
- Aluminium nitride Aluminium oxide Binary compound Ternary compound Light emitting diode Dislocation Epitaxy Gallium nitride Heterojunction Line width Output power Multiple quantum well Quantum well Vacuum ultraviolet radiation Ultraviolet radiation Active region Superlattice Room temperature
- Keyword (es)
- Aluminio nitruro Aluminio óxido Compuesto binario Compuesto ternario Diodo electroluminescente Dislocación Epitaxia Galio nitruro Heterounión Anchura raya espectral Potencia salida Pozo cuántico múltiple Pozo cuántico Radiación ultravioleta extrema Radiación ultravioleta Región activa Superred Temperatura ambiente
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16546900
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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