High performance GaN HEMTs for mmWave applications
- Author
- BOUTROS, K. S1 ; REGAN, M1 ; ROWELL, P1 ; BRAR, B1
[1] Rockwell Scientific Company, Thousand Oaks, CA, United States - Conference title
- State-of-the-art program on compound semiconductors XLI = Nitride and wide bandgap semiconductors for sensors, photonics, and electronics V (Honolulu HI, 3-8 October 2004) (en)
- Conference name
- Nitride and wide bandgap semiconductors for sensors, photonics, and electronics. Symposium (5 ; Honolulu HI 2004-10-03) = State-of-the-art program on compound semiconductors. Symposium (41 ; Honolulu HI 2004-10-03)
- Author (monograph)
- Ng, H.M (Editor); Baca, A.G (Editor)
Electrochemical Society, Electronics Division, Pennington NJ, United States (Organiser of meeting) - Source
Proceedings - Electrochemical Society. 2004, pp 454-458, 5 p ; ref : 6 ref
- ISSN
- 0161-6374
- ISBN
- 1-56677-419-5
- Scientific domain
- General chemistry, physical chemistry; Crystallography; Electronics; Electrical engineering; Energy; Condensed state physics; Physics
- Publisher
- Electrochemical Society, Pennington NJ
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Aluminium nitrure Composé binaire Composé ternaire Contact ohmique Evaluation performance Gallium nitrure Haute fréquence Matériau réfractaire Modulation impulsion codage Résistance contact Silicium carbure Structure surface Surface lisse Transistor mobilité électron élevée Al Ga N AlGaN C Si Ga N GaN Si SiC
- Keyword (en)
- Aluminium nitride Binary compound Ternary compound Ohmic contact Performance evaluation Gallium nitride High frequency Refractory material Pulse code modulation Contact resistance Silicon carbide Surface structure Smooth surface High electron mobility transistor
- Keyword (es)
- Aluminio nitruro Compuesto binario Compuesto ternario Contacto óhmico Evaluación prestación Galio nitruro Alta frecuencia Material refractario Modulación impulsión codificación Resistencia contacto Silicio carburo Estructura superficie Superficie lisa Transistor movibilidad elevada electrones
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16546927
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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