Planar GaN-based UV photodetectors formed by Si implantation
- Author
- CHEN, M. C1 ; SHEU, J. K2 ; LEE, M. L3 ; KAO, C. J4 ; TUN, C. J1 ; CHI, G. C1 4
[1] Institute of Optical Science, National Central University, Chung-Li 32054, Taiwan, Province of China
[2] Institute of Microelectronics and Department of Electrical Engineering National Cheng Kung University, Tainan 70101, Taiwan, Province of China
[3] Institute of Microelectronics, National Cheng Kung University, Tainan 70101, Taiwan, Province of China
[4] Department of Physics, National Central University, Chung-Li 32054, Taiwan, Province of China - Conference title
- State-of-the-art program on compound semiconductors XLI = Nitride and wide bandgap semiconductors for sensors, photonics, and electronics V (Honolulu HI, 3-8 October 2004) (en)
- Conference name
- Nitride and wide bandgap semiconductors for sensors, photonics, and electronics. Symposium (5 ; Honolulu HI 2004-10-03) = State-of-the-art program on compound semiconductors. Symposium (41 ; Honolulu HI 2004-10-03)
- Author (monograph)
- Ng, H.M (Editor); Baca, A.G (Editor)
Electrochemical Society, Electronics Division, Pennington NJ, United States (Organiser of meeting) - Source
Proceedings - Electrochemical Society. 2004, pp 522-528, 7 p ; ref : 11 ref
- ISSN
- 0161-6374
- ISBN
- 1-56677-419-5
- Scientific domain
- General chemistry, physical chemistry; Crystallography; Electronics; Electrical engineering; Energy; Condensed state physics; Physics
- Publisher
- Electrochemical Society, Pennington NJ
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Composé binaire Courant obscurité Dispositif optoélectronique Détecteur UV Fonction réponse Gallium nitrure Jonction p n Photodiode couche intrinsèque Photodétecteur Profil dopage Réponse spectrale Réponse temporelle Silicium Technologie planaire Ga N GaN Si
- Keyword (en)
- Binary compound Dark current Optoelectronic device Ultraviolet detector Response function Gallium nitride p n junction p i n photodiodes Photodetector Doping profile Spectral response Time response Silicon Planar technology
- Keyword (es)
- Compuesto binario Corriente obscuridad Dispositivo optoelectrónico Detector UV Función respuesta Galio nitruro Unión p n Fotodetector Perfil doping Respuesta temporal Silicio Tecnología planar
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00G Instruments, apparatus, components and techniques common to several branches of physics and astronomy / 001B00G07 General equipment and techniques / 001B00G07D Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics Metrology
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16546974
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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