Application of three-dimensional dislocation dynamics simulation to the STI semiconductor structure
- Author
- IZUMI, S1 ; MIYAKE, T2 ; SAKAI, S1 ; OHTA, H3
[1] The University of Tokyo, School of Engineering, Department of Mechanical Engineering, 7-3-1, Bunkyo-ku, Hongo, Tokyo, 113-8656, Japan
[2] Automotive Systems, Hitachi Ltd., Takaba 2520, Hitachinaka, Ibaraki, 312-8503, Japan
[3] Mechanical Engineering Research Laboratory, Hitachi Ltd., Kandatsu 502, Tsuchiura, Ibaraki, 300-0013, Japan - Source
Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2005, Vol 395, Num 1-2, pp 62-69, 8 p ; ref : 29 ref
- ISSN
- 0921-5093
- Scientific domain
- Crystallography; Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- Computational mechanics Dislocation dynamics Process simulations Semiconductor devices Silicon
- Keyword (fr)
- Dislocation Echelle nanométrique Effet contrainte Germination dislocation Microscopie électronique transmission Méthode élément fini Semiconducteur Silicium Système glissement 6172L Si
- Keyword (en)
- Dislocations Nanometer scale Stress effects Dislocation nucleation Transmission electron microscopy Finite element method Semiconductor materials Silicon Slip system
- Keyword (es)
- Sistema deslizamiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72L Linear defects: dislocations, disclinations
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16597982
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.msea.2004.12.001 
https://dx.doi.org/10.1016/j.msea.2004.12.001
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