Thermal double donor annihilation and oxygen precipitation at around 650 °C in czochralski-grown Si : local vibrational mode studies
- Author
- MURIN, L. I1 ; LINDSTRÖM, J. L2 ; MARKEVICH, V. P1 ; MISIUK, A3 ; LONDOS, C. A4
[1] Institute of Solid State and Semiconductor Physics, National Academy of Sciences of Belarus, P Brovki Street 17, 220072 Minsk, Belarus
[2] Division of Solid State Physics, Lund University, Lund, Sweden
[3] Institute of Electron Technology, Warsaw, Poland
[4] Physics Department, Athens University, Athens, Greece - Conference title
- Special issue containing articles presented at the First International Workshop 'Coordination action on defects relevant to engineering silicon-based devices' (Catania, Sicily, 26-28 September 2004)
- Conference name
- CADRES International Worshop 'Coordination action on defects relevant to engineering silicon-based devices' (1 ; Catania, Sicily 2004-09-26)
- Author (monograph)
- EVANS-FREEMAN, Jans (Editor)
European Commission ; Framework 6 IST programme, Brussels, Belgium (Organiser of meeting) - Source
Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 22, pp S2237-S2246 ; ref : 30 ref
- CODEN
- JCOMEL
- ISSN
- 0953-8984
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Addition carbone Addition oxygène Annihilation défaut Centre donneur Défaut complexe Haute pression Impureté Interstitiel Mode localisé Mode vibration Pression hydrostatique Précipitation Recuit Semiconducteur Silicium 6172Y 6320M 7155C Si
- Keyword (en)
- Carbon additions Oxygen additions Defect annihilation Donor center Complex defect High pressure Impurities Interstitials Localized modes Vibrational modes Hydrostatic pressure Precipitation Annealing Semiconductor materials Silicon
- Keyword (es)
- Aniquilación defecto Centro dador Defecto complejo
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72Y Interaction between different crystal defects; gettering effect
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60C Lattice dynamics / 001B60C20 Phonons and vibrations in crystal lattices / 001B60C20M Phonon-defect interactions
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels / 001B70A55C Elemental semiconductors
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16873656
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0953-8984/17/22/011 
https://dx.doi.org/10.1088/0953-8984/17/22/011
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