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Ab-initio simulations on growth and interface properties of epitaxial oxides on silicon

Author
FÖRST, C. J1 2 ; ASHMAN, C. R1 ; SCHWARZ, K2 ; BLÖCHL, P. E1
[1] Clausthal University of Technology, Institute for Theoretical Physics, Leibnitzstr. 10, 38678 Clausthal-Zellerfeld, Germany
[2] Vienna University of Technology, Institute for Materials Chemistry, Getreidemarkt 9/165-TC, 1060 Vienna, Austria
Conference title
Infos 2005: Proceedings of the 14th Biennal Conference on Insulating Films on Semiconductors, June 22-24, 2005, Leuven, Belgium
Conference name
INFOS 2005 Biennal Conference on Insulating Films on Semiconductors (14 ; Leuven 2005-06-22)
Author (monograph)
GROESENEKEN, Guido (Editor)1 ; KACZER, Ben (Editor)1
IMEC, Leuven, Belgium (Organiser of meeting)
[1] IMEC, Leuven, Belgium
Source

Microelectronic engineering. 2005, Vol 80, pp 402-407, 6 p ; ref : 19 ref

CODEN
MIENEF
ISSN
0167-9317
Scientific domain
Electronics
Publisher
Elsevier Science, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Author keyword
ab-initio band-offset engineering epitaxial growth high-k oxides interface chemistry
Keyword (fr)
Calcul ab initio Croissance film Discontinuité bande Diélectrique permittivité élevée Epitaxie Mécanisme croissance Méthode dynamique moléculaire Propriété interface Strontium oxyde Strontium titanate Structure électronique O Sr Ti O Sr SrO SrTiO3
Keyword (en)
Ab initio calculations Film growth Band offset High k dielectric Epitaxy Growth mechanism Molecular dynamics method Interface properties Strontium oxide Strontium titanates Electronic structure
Keyword (es)
Discontinuidad banda Dieléctrico alta constante dieléctrica Epitaxia Mecanismo crecimiento Método dinámico molecular Propiedad interfase Estroncio óxido Estructura electrónica
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16891712

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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