Ab initio modeling of structure and defects at the HfO2/Si interface
- Author
- GAVARTIN, J. L1 ; FONSECA, L2 ; BERSUKER, G3 ; SHIUGER, A. L1
[1] Department of Physics and Astronomy, University College London, Gower Street, WCIE 6BP, London, United Kingdom
[2] Freescale Semiconductors Brasil, United States
[3] SEMATECH, Austin, Texas, United States - Conference title
- Infos 2005: Proceedings of the 14th Biennal Conference on Insulating Films on Semiconductors, June 22-24, 2005, Leuven, Belgium
- Conference name
- INFOS 2005 Biennal Conference on Insulating Films on Semiconductors (14 ; Leuven 2005-06-22)
- Author (monograph)
- GROESENEKEN, Guido (Editor)1 ; KACZER, Ben (Editor)1
IMEC, Leuven, Belgium (Organiser of meeting)
[1] IMEC, Leuven, Belgium - Source
Microelectronic engineering. 2005, Vol 80, pp 412-415, 4 p ; ref : 9 ref
- CODEN
- MIENEF
- ISSN
- 0167-9317
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- HfO2 Si SiO2 ab initio modelling interface
- Keyword (fr)
- Calcul ab initio Couche interfaciale Croissance film Etat défaut Etat interface Hafnium oxyde Lacune Modélisation Méthode couche atomique Piège trou Silicium Structure interface Hf O HfO2 Si
- Keyword (en)
- Ab initio calculations Interfacial layer Film growth Defect states Interface state Hafnium oxide Vacancy Modeling Atomic layer method Hole traps Silicon Interface structure
- Keyword (es)
- Capa interfacial Estado interfase Hafnio óxido Cavidad Modelización Método capa atómica Silicio Estructura interfaz
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16891714
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mee.2005.04.097 
https://dx.doi.org/10.1016/j.mee.2005.04.097
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