Subthreshold electron mobility in SOI MOSFETs and MESFETs
- Author
- KHAN, Tarik1 ; VASILESKA, Dragica1 ; THORNTON, Trevor J1
[1] Department of Electrical Engineering adnt eh center for Solid State Electronics Research, Arizona State University, Tempe. AZ 85287-5706, United States - Source
I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 7, pp 1622-1626, 5 p ; ref : 19 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Low-field mobility SOI MESFETs low-power radio frequency applications surface-roughness scattering
- Keyword (fr)
- Canal n Diffusion surface Electronique faible puissance Equation Boltzmann Equation transport Mobilité électron Modélisation Radiofréquence Rugosité Semiconducteur type n Simulateur Technologie silicium sur isolant Transistor MOSFET Transistor effet champ barrière Schottky
- Keyword (en)
- n channel Surface scattering Low-power electronics Boltzmann equation Transport equation Electron mobility Modeling Radiofrequency Roughness n type semiconductor Simulator Silicon on insulator technology MOSFET Metal semiconductor field effect transistor
- Keyword (es)
- Canal n Ecuación Boltzmann Ecuación transporte Movilidad electrón Modelización Radiofrecuencia Rugosidad Semiconductor tipo n Simulador Tecnología silicio sobre aislante Transistor efecto campo barrera Schottky
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16896796
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2005.850617 
https://dx.doi.org/10.1109/TED.2005.850617
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