Analytic solution of the channel potential in undoped symmetric dual-gate MOSFETs
- Author
- ORTIZ-CONDE, Adelmo1 ; GARCIA-SANCHEZ, Francisco J1 ; MALOBABIC, Slavica1
[1] Solid State Electronics Laboratory, Simón Bolívar University, Caracas 1080, Venezuela - Source
I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 7, pp 1669-1672, 4 p ; ref : 19 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Intrinsic channel MOS compact modeling symmetric DG MOSFET undoped body MOS
- Keyword (fr)
- Modélisation Méthode analytique Potentiel surface Solution exacte Transistor MOSFET Transistor grille double
- Keyword (en)
- Modeling Analytical method Surface potential Exact solution MOSFET Dual gate transistor
- Keyword (es)
- Modelización Método analítico Potencial superficie Solución exacta Transistor de compuerta doble
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 16896804
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2005.850629 
https://dx.doi.org/10.1109/TED.2005.850629
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