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Density functional theory description of hole-trapping in SiO2 : A self-interaction-corrected approach

Author
D'AVEZAC, Mayeul1 ; CALANDRA, Matteo1 ; MAURI, Francesco1
[1] Laboratoire de Minéralogie-Cristallographie, case 115, 4 place Jussieu, 75252, Paris, France
Source

Physical review B. Condensed matter and materials physics. 2005, Vol 71, Num 20, pp 205210.1-205210.5 ; ref : 25 ref

ISSN
1098-0121
Scientific domain
Metallurgy, welding; Condensed state physics
Publisher
American Physical Society, Ridge, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Autocohérence Autopiégeage Implémentation Interaction hyperfine Minimisation Méthode fonctionnelle densité Piégeage porteur charge Silicium oxyde 7220J O Si SiO2
Keyword (en)
Self consistency Self trapping Implementation Hyperfine interactions Minimization Density functional method Charge carrier trapping Silicon oxides
Keyword (es)
Autocoherencia Autocaptura Captura portador carga
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators / 001B70B20J Charge carriers: generation, recombination, lifetime, and trapping

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16904947

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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