Interface morphology in strained layer epitaxy of Si/Si1-xGex layers studied by x-ray scattering under grazing incidence and atomic force microscopy
- Author
- KOVATS, Z1 ; SALDITT, T1 ; METZGER, T. H1 ; PEISL, J1 ; STIMPEL, T1 ; LORENZ, H1 ; CHU, J. O2 ; ISMALL, K2
[1] Sektion Physik der Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, 80539 München, Germany
[2] IBM T J Watson Research Center, Yorktown Heights, New York 10598, United States - Source
Journal of physics. D, Applied physics (Print). 1999, Vol 32, Num 4, pp 359-368 ; ref : 40 ref
- CODEN
- JPAPBE
- ISSN
- 0022-3727
- Scientific domain
- Condensed state physics; Physics; Plasma physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Alliage binaire Composition chimique Contrainte Couche mince Couche tampon Couche épitaxique Diffusion RX Etude expérimentale Germanium alliage Hétérojonction Incidence rasante Interface solide solide Matériau semiconducteur Microscopie force atomique Morphologie Silicium alliage Silicium Solution solide Ge Si Si1-xGex Si Non métal
- Keyword (en)
- Binary alloys Chemical composition Stresses Thin films Buffer layer Epitaxial layers X-ray scattering Experimental study Germanium alloys Heterojunctions Grazing incidence Solid-solid interfaces Semiconductor materials Atomic force microscopy Morphology Silicon alloys Silicon Solid solutions Nonmetals
- Keyword (es)
- Capa tampón Incidencia rasante
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35C Interface structure and roughness
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H65 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
- Pacs
- 6865 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1690679
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0022-3727/32/4/002 
https://dx.doi.org/10.1088/0022-3727/32/4/002
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0022-3727\/32\/4\/002\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:148:\"Interface morphology in strained layer epitaxy of Si\/Si1-xGex layers studied by x-ray scattering under grazing incidence and atomic force microscopy\";s:9:\"\u0000*\u0000jtitle\";s:46:\"Journal of physics. D, Applied physics (Print)\";s:9:\"\u0000*\u0000stitle\";s:32:\"J. phys., D. Appl. phys. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"1999\";s:9:\"\u0000*\u0000volume\";s:2:\"32\";s:8:\"\u0000*\u0000issue\";s:1:\"4\";s:8:\"\u0000*\u0000spage\";s:3:\"359\";s:8:\"\u0000*\u0000epage\";s:3:\"368\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3727\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"KOVATS\";s:10:\"\u0000*\u0000aufirst\";s:1:\"Z\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:10:\"SALDITT, T\";i:1;s:13:\"METZGER, T. H\";i:2;s:8:\"PEISL, J\";i:3;s:10:\"STIMPEL, T\";i:4;s:9:\"LORENZ, H\";i:5;s:9:\"CHU, J. O\";i:6;s:9:\"ISMALL, K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JPAPBE\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:148:\"Interface morphology in strained layer epitaxy of Si\/Si1-xGex layers studied by x-ray scattering under grazing incidence and atomic force microscopy\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0022-3727\/32\/4\/002\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:148:\"Interface morphology in strained layer epitaxy of Si\/Si1-xGex layers studied by x-ray scattering under grazing incidence and atomic force microscopy\";s:9:\"\u0000*\u0000jtitle\";s:46:\"Journal of physics. D, Applied physics (Print)\";s:9:\"\u0000*\u0000stitle\";s:32:\"J. phys., D. Appl. phys. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"1999\";s:9:\"\u0000*\u0000volume\";s:2:\"32\";s:8:\"\u0000*\u0000issue\";s:1:\"4\";s:8:\"\u0000*\u0000spage\";s:3:\"359\";s:8:\"\u0000*\u0000epage\";s:3:\"368\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3727\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"KOVATS\";s:10:\"\u0000*\u0000aufirst\";s:1:\"Z\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:10:\"SALDITT, T\";i:1;s:13:\"METZGER, T. H\";i:2;s:8:\"PEISL, J\";i:3;s:10:\"STIMPEL, T\";i:4;s:9:\"LORENZ, H\";i:5;s:9:\"CHU, J. O\";i:6;s:9:\"ISMALL, K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JPAPBE\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:148:\"Interface morphology in strained layer epitaxy of Si\/Si1-xGex layers studied by x-ray scattering under grazing incidence and atomic force microscopy\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0022-3727\/32\/4\/002\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0022-3727\/32\/4\/002\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:148:\"Interface morphology in strained layer epitaxy of Si\/Si1-xGex layers studied by x-ray scattering under grazing incidence and atomic force microscopy\";s:9:\"\u0000*\u0000jtitle\";s:46:\"Journal of physics. D, Applied physics (Print)\";s:9:\"\u0000*\u0000stitle\";s:32:\"J. phys., D. Appl. phys. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"1999\";s:9:\"\u0000*\u0000volume\";s:2:\"32\";s:8:\"\u0000*\u0000issue\";s:1:\"4\";s:8:\"\u0000*\u0000spage\";s:3:\"359\";s:8:\"\u0000*\u0000epage\";s:3:\"368\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3727\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"KOVATS\";s:10:\"\u0000*\u0000aufirst\";s:1:\"Z\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:10:\"SALDITT, T\";i:1;s:13:\"METZGER, T. H\";i:2;s:8:\"PEISL, J\";i:3;s:10:\"STIMPEL, T\";i:4;s:9:\"LORENZ, H\";i:5;s:9:\"CHU, J. O\";i:6;s:9:\"ISMALL, K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JPAPBE\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:148:\"Interface morphology in strained layer epitaxy of Si\/Si1-xGex layers studied by x-ray scattering under grazing incidence and atomic force microscopy\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0022-3727\/32\/4\/002\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:148:\"Interface morphology in strained layer epitaxy of Si\/Si1-xGex layers studied by x-ray scattering under grazing incidence and atomic force microscopy\";s:9:\"\u0000*\u0000jtitle\";s:46:\"Journal of physics. D, Applied physics (Print)\";s:9:\"\u0000*\u0000stitle\";s:32:\"J. phys., D. Appl. phys. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"1999\";s:9:\"\u0000*\u0000volume\";s:2:\"32\";s:8:\"\u0000*\u0000issue\";s:1:\"4\";s:8:\"\u0000*\u0000spage\";s:3:\"359\";s:8:\"\u0000*\u0000epage\";s:3:\"368\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3727\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"KOVATS\";s:10:\"\u0000*\u0000aufirst\";s:1:\"Z\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:10:\"SALDITT, T\";i:1;s:13:\"METZGER, T. H\";i:2;s:8:\"PEISL, J\";i:3;s:10:\"STIMPEL, T\";i:4;s:9:\"LORENZ, H\";i:5;s:9:\"CHU, J. O\";i:6;s:9:\"ISMALL, K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JPAPBE\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:148:\"Interface morphology in strained layer epitaxy of Si\/Si1-xGex layers studied by x-ray scattering under grazing incidence and atomic force microscopy\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1088\/0022-3727\/32\/4\/002\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:148:\"Interface morphology in strained layer epitaxy of Si\/Si1-xGex layers studied by x-ray scattering under grazing incidence and atomic force microscopy\";s:9:\"\u0000*\u0000jtitle\";s:46:\"Journal of physics. D, Applied physics (Print)\";s:9:\"\u0000*\u0000stitle\";s:32:\"J. phys., D. Appl. phys. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"1999\";s:9:\"\u0000*\u0000volume\";s:2:\"32\";s:8:\"\u0000*\u0000issue\";s:1:\"4\";s:8:\"\u0000*\u0000spage\";s:3:\"359\";s:8:\"\u0000*\u0000epage\";s:3:\"368\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0022-3727\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:6:\"KOVATS\";s:10:\"\u0000*\u0000aufirst\";s:1:\"Z\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:10:\"SALDITT, T\";i:1;s:13:\"METZGER, T. H\";i:2;s:8:\"PEISL, J\";i:3;s:10:\"STIMPEL, T\";i:4;s:9:\"LORENZ, H\";i:5;s:9:\"CHU, J. O\";i:6;s:9:\"ISMALL, K\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"JPAPBE\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:148:\"Interface morphology in strained layer epitaxy of Si\/Si1-xGex layers studied by x-ray scattering under grazing incidence and atomic force microscopy\";s:8:\"\u0000*\u0000place\";s:7:\"Bristol\";s:6:\"\u0000*\u0000pub\";s:20:\"Institute of Physics\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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