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Origin of the 'S-shaped' temperature dependence of luminescent peaks from semiconductors

Author
LI, Q1 ; XU, S. J1 ; XIE, M. H1 ; TONG, S. Y1
[1] Department of Physics and HKU-CAS Joint Laboratory on New Materials, The University of Hong Kong, Pokfulam Road, Hong-Kong
Source

Journal of physics. Condensed matter (Print). 2005, Vol 17, Num 30, pp 4853-4858, 6 p ; ref : 21 ref

CODEN
JCOMEL
ISSN
0953-8984
Scientific domain
Crystallography; Metallurgy, welding; Condensed state physics
Publisher
Institute of Physics, Bristol
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Bande interdite Effet température Etat localisé Forme en S Luminescence Relation empirique Semiconducteur 7860
Keyword (en)
Energy gap Temperature effects Localized states S shape Luminescence Empirical relation Semiconductor materials
Keyword (es)
Forma de una S Relación empírica
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H60 Other luminescence and radiative recombination

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
16994232

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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