High-voltage 4H-SiC PiN rectifiers with single-implant, multi-zone JTE termination
- Author
- LOSEE, P. A1 ; BALACHANDRAN, S. K1 ; ZHU, L1 ; LI, C1 ; SEILER, J1 ; CHOW, T. P1 ; BHAT, I. B1 ; GUTMANN, R. J1
[1] Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, NY-12180, United States - Conference title
- ISPSD '04 (proceedings of the 16th International Symposium on Power Semiconductor Devices & ICs)
- Conference name
- International Symposium on Power Semiconductor Devices & ICs (16 ; Kitakyushu 2004-05-24)
- Author (monograph)
- IEEE, Electron Devices Society, United States (Organiser of meeting)
- Source
ISPSD '04 (proceedings of the 16th International Symposium on Power Semiconductor Devices & ICs). 2004, pp 301-304, 4 p ; ref : 12 ref
- ISBN
- 4-88686-060-5
- Scientific domain
- Electronics; Electrical engineering
- Publisher
- IEEE Japan, Tokyo
- Publication country
- Japan
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Disruption électrique Gravure Haute tension Masquage Redresseur Simulation numérique Structure surface Tension amorçage Terminaison jonction
- Keyword (en)
- Electric breakdown Engraving High voltage Masking Rectifier Numerical simulation Surface structure Breakdown voltage Junction termination
- Keyword (es)
- Disrupción eléctrica Grabado Alta tensión Enmascaramiento Rectificador Simulación numérica Estructura superficie Voltaje perforación
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03D Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 17412772
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:82:\"High-voltage 4H-SiC PiN rectifiers with single-implant, multi-zone JTE termination\";s:9:\"\u0000*\u0000jtitle\";s:0:\"\";s:9:\"\u0000*\u0000stitle\";s:0:\"\";s:7:\"\u0000*\u0000date\";s:4:\"2004\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"301\";s:8:\"\u0000*\u0000epage\";s:3:\"304\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:0:\"\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"LOSEE\";s:10:\"\u0000*\u0000aufirst\";s:4:\"P. A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:18:\"BALACHANDRAN, S. K\";i:1;s:6:\"ZHU, L\";i:2;s:5:\"LI, C\";i:3;s:9:\"SEILER, J\";i:4;s:10:\"CHOW, T. P\";i:5;s:10:\"BHAT, I. B\";i:6;s:13:\"GUTMANN, R. J\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"4-88686-060-5\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:96:\"ISPSD '04 (proceedings of the 16th International Symposium on Power Semiconductor Devices & ICs)\";s:8:\"\u0000*\u0000title\";s:82:\"High-voltage 4H-SiC PiN rectifiers with single-implant, multi-zone JTE termination\";s:8:\"\u0000*\u0000place\";s:5:\"Tokyo\";s:6:\"\u0000*\u0000pub\";s:10:\"IEEE Japan\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:82:\"High-voltage 4H-SiC PiN rectifiers with single-implant, multi-zone JTE termination\";s:9:\"\u0000*\u0000jtitle\";s:0:\"\";s:9:\"\u0000*\u0000stitle\";s:0:\"\";s:7:\"\u0000*\u0000date\";s:4:\"2004\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"301\";s:8:\"\u0000*\u0000epage\";s:3:\"304\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:0:\"\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"LOSEE\";s:10:\"\u0000*\u0000aufirst\";s:4:\"P. A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:18:\"BALACHANDRAN, S. K\";i:1;s:6:\"ZHU, L\";i:2;s:5:\"LI, C\";i:3;s:9:\"SEILER, J\";i:4;s:10:\"CHOW, T. P\";i:5;s:10:\"BHAT, I. B\";i:6;s:13:\"GUTMANN, R. J\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"4-88686-060-5\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:96:\"ISPSD '04 (proceedings of the 16th International Symposium on Power Semiconductor Devices & ICs)\";s:8:\"\u0000*\u0000title\";s:82:\"High-voltage 4H-SiC PiN rectifiers with single-implant, multi-zone JTE termination\";s:8:\"\u0000*\u0000place\";s:5:\"Tokyo\";s:6:\"\u0000*\u0000pub\";s:10:\"IEEE Japan\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:82:\"High-voltage 4H-SiC PiN rectifiers with single-implant, multi-zone JTE termination\";s:9:\"\u0000*\u0000jtitle\";s:0:\"\";s:9:\"\u0000*\u0000stitle\";s:0:\"\";s:7:\"\u0000*\u0000date\";s:4:\"2004\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"301\";s:8:\"\u0000*\u0000epage\";s:3:\"304\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:0:\"\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"LOSEE\";s:10:\"\u0000*\u0000aufirst\";s:4:\"P. A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:18:\"BALACHANDRAN, S. K\";i:1;s:6:\"ZHU, L\";i:2;s:5:\"LI, C\";i:3;s:9:\"SEILER, J\";i:4;s:10:\"CHOW, T. P\";i:5;s:10:\"BHAT, I. B\";i:6;s:13:\"GUTMANN, R. J\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"4-88686-060-5\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:96:\"ISPSD '04 (proceedings of the 16th International Symposium on Power Semiconductor Devices & ICs)\";s:8:\"\u0000*\u0000title\";s:82:\"High-voltage 4H-SiC PiN rectifiers with single-implant, multi-zone JTE termination\";s:8:\"\u0000*\u0000place\";s:5:\"Tokyo\";s:6:\"\u0000*\u0000pub\";s:10:\"IEEE Japan\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:82:\"High-voltage 4H-SiC PiN rectifiers with single-implant, multi-zone JTE termination\";s:9:\"\u0000*\u0000jtitle\";s:0:\"\";s:9:\"\u0000*\u0000stitle\";s:0:\"\";s:7:\"\u0000*\u0000date\";s:4:\"2004\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"301\";s:8:\"\u0000*\u0000epage\";s:3:\"304\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:0:\"\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"LOSEE\";s:10:\"\u0000*\u0000aufirst\";s:4:\"P. A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:18:\"BALACHANDRAN, S. K\";i:1;s:6:\"ZHU, L\";i:2;s:5:\"LI, C\";i:3;s:9:\"SEILER, J\";i:4;s:10:\"CHOW, T. P\";i:5;s:10:\"BHAT, I. B\";i:6;s:13:\"GUTMANN, R. J\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"4-88686-060-5\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:96:\"ISPSD '04 (proceedings of the 16th International Symposium on Power Semiconductor Devices & ICs)\";s:8:\"\u0000*\u0000title\";s:82:\"High-voltage 4H-SiC PiN rectifiers with single-implant, multi-zone JTE termination\";s:8:\"\u0000*\u0000place\";s:5:\"Tokyo\";s:6:\"\u0000*\u0000pub\";s:10:\"IEEE Japan\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:82:\"High-voltage 4H-SiC PiN rectifiers with single-implant, multi-zone JTE termination\";s:9:\"\u0000*\u0000jtitle\";s:0:\"\";s:9:\"\u0000*\u0000stitle\";s:0:\"\";s:7:\"\u0000*\u0000date\";s:4:\"2004\";s:9:\"\u0000*\u0000volume\";s:0:\"\";s:8:\"\u0000*\u0000issue\";s:0:\"\";s:8:\"\u0000*\u0000spage\";s:3:\"301\";s:8:\"\u0000*\u0000epage\";s:3:\"304\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:0:\"\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"LOSEE\";s:10:\"\u0000*\u0000aufirst\";s:4:\"P. A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:7:{i:0;s:18:\"BALACHANDRAN, S. K\";i:1;s:6:\"ZHU, L\";i:2;s:5:\"LI, C\";i:3;s:9:\"SEILER, J\";i:4;s:10:\"CHOW, T. P\";i:5;s:10:\"BHAT, I. B\";i:6;s:13:\"GUTMANN, R. J\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:13:\"4-88686-060-5\";s:8:\"\u0000*\u0000coden\";s:0:\"\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:96:\"ISPSD '04 (proceedings of the 16th International Symposium on Power Semiconductor Devices & ICs)\";s:8:\"\u0000*\u0000title\";s:82:\"High-voltage 4H-SiC PiN rectifiers with single-implant, multi-zone JTE termination\";s:8:\"\u0000*\u0000place\";s:5:\"Tokyo\";s:6:\"\u0000*\u0000pub\";s:10:\"IEEE Japan\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"4\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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