A marvelous low on-resistance 20V rated self alignment trench MOSFET (SAT-MOS) in a 0.35μm LSI design rule with both high forward blocking voltage yield and large current capability
- Author
- NARAZAKI, A1 ; TAKANO, K1 ; OKU, K2 ; HAMACHI, H2 ; MINATO, T1
[1] Mitsubishi Electric Co, Japan
[2] Renesas Kyushu semiconductor Co. Imajuku-higashi 1-1-1, Nishi-ku, Fukuoka, Fukuoka, Japan - Conference title
- ISPSD '04 (proceedings of the 16th International Symposium on Power Semiconductor Devices & ICs)
- Conference name
- International Symposium on Power Semiconductor Devices & ICs (16 ; Kitakyushu 2004-05-24)
- Author (monograph)
- IEEE, Electron Devices Society, United States (Organiser of meeting)
- Source
ISPSD '04 (proceedings of the 16th International Symposium on Power Semiconductor Devices & ICs). 2004, pp 393-396, 4 p ; ref : 7 ref
- ISBN
- 4-88686-060-5
- Scientific domain
- Electronics; Electrical engineering
- Publisher
- IEEE Japan, Tokyo
- Publication country
- Japan
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Circuit LSI Circuit intégré Commutation Conception circuit intégré Evaluation performance Fabrication microélectronique Haute tension Implantation ion Pastille électronique Production masse Profondeur faible Régime statique Technologie autoalignée Technologie tranchée Transistor MOSFET
- Keyword (en)
- LSI circuit Integrated circuit Switching Integrated circuit design Performance evaluation Microelectronic fabrication High voltage Ion implantation Wafer Mass production Shallow depth Static conditions Self aligned technology Trench technology MOSFET
- Keyword (es)
- Circuito LSI Circuito integrado Conmutación Evaluación prestación Fabricación microeléctrica Alta tensión Implantación ión Pastilla electrónica Producción en masa Profundidad débil Régimen estático Tecnología rejilla autoalineada Tecnología trinchera
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 17412793
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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