A method for analysis of carrier density and mobility in polycrystalline bismuth
- Author
- HASEGAWA, Y1 ; ISHIKAWA, Y1 ; SASO, T1 ; SHIRAI, H1 ; MORITA, H2 ; KOMINE, T3 ; NAKAMURA, H4
[1] Graduate School of Science and Engineering, Saitama University, 255, Shimo-Okubo, Sakura-ku, Saitama 338-8570, Japan
[2] Saitama Industrial Technology Center, 3-12-18, Kami-Aoki, Kawaguchi, Saitama 333-0844, Japan
[3] Department of Engineering, Ibaraki University, 4-12-1, Nakanarusawa, Hitachi, Ibaraki 316-8511, Japan
[4] National Institute for Fusion Science, 322-,6 Oroshi, Toki, Gifu 509-5252, Japan - Source
Physica. B, Condensed matter. 2006, Vol 382, Num 1-2, pp 140-146, 7 p ; ref : 20 ref
- ISSN
- 0921-4526
- Scientific domain
- Crystallography; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- 71.55.Ak 72.15.Jf 73.50.Lw 74.25.Fy Carrier density Low magnetic field approximation Mobility Polycrystalline bismuth
- Keyword (fr)
- Addition étain Bismuth Champ faible Contamination Densité porteur charge Effet Hall Effet Seebeck Effet champ magnétique Effet température Impureté résiduelle Magnétorésistance Mobilité porteur charge Polycristal 7215
- Keyword (en)
- Tin additions Bismuth Low field Contamination Carrier density Hall effect Seebeck effect Magnetic field effects Temperature effects Residual impurity Magnetoresistance Carrier mobility Polycrystals
- Keyword (es)
- Campo débil Impureza residual
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B15 Electronic conduction in metals and alloys
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 17872735
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.physb.2006.02.011 
https://dx.doi.org/10.1016/j.physb.2006.02.011
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