High-resolution photoinduced transient spectroscopy of defect centres in semi-insulating InP obtained by iron diffusion
- Author
- KAMINSKI, P1 ; KOZŁOWSKI, R1 ; STRZELECKA, S1 ; PAWLOWSKI, M1 2 ; WEGNER, E1 ; PIERSA, M1
[1] Institute of Electronic Materials Technology, ul. Wólczyńska 133, 01-919 Warszawa, Poland
[2] Military University of Technology, ul. Kaliskiego 2, 00-908 Warszawa, Poland - Conference title
- 11th International Conference on Defects - Recognition Imaging and Physics in Semiconductors (DRIP-XI), September 13-19, 2005, Beijing, China
- Conference name
- DRIP-XI: International Conference on Defects - Recognition Imaging and Physics in Semiconductors (11 ; Beijing 2005-09-13)
- Author (monograph)
- WANG, Zhanguo (Editor)1 ; YANG, Deren (Editor); QU, Shengchun (Editor)
Chinese Academy of Sciences, Institute of Semiconductors, Beijing, China (Organiser of meeting)
Zhejiang University, Hangzhou, Zhejiang Province, China (Organiser of meeting)
[1] Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China - Source
Materials science in semiconductor processing. 2006, Vol 9, Num 1-3, pp 384-389, 6 p ; ref : 15 ref
- ISSN
- 1369-8001
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Conference Paper
- Language
- English
- Author keyword
- 61.72.Cc; 71.55.Eq; 71.55.-i HRPITS; Si InP; Defect centers
- Keyword (fr)
- Composé binaire Composé minéral Courant photoélectrique Diffusion(transport) Défaut ponctuel Extraction paramètre Fer Haute résolution Haute température Indium phosphure Modèle 2 dimensions Métal transition Pastille électronique Phosphore Photoconductivité Propriété électronique Recuit Réseau neuronal Semiconducteur III-V Silicium Spectrométrie transitoire photoinduite Structure défaut Structure électronique Température recuit Fe In P InP P Si
- Keyword (en)
- Binary compound Inorganic compound Photoelectric current Diffusion Point defect Parameter extraction Iron High resolution High temperature Indium phosphide Two dimensional model Transition metal Wafer Phosphorus Photoconductivity Electronic properties Annealing Neural network III-V semiconductors Silicon Photo-induced transient spectroscopy Defect structure Electronic structure Annealing temperature
- Keyword (es)
- Compuesto binario Compuesto inorgánico Corriente fotoeléctrica Defecto puntual Extracción parámetro Hierro Alta resolucion Alta temperatura Indio fosfuro Modelo 2 dimensiones Metal transición Pastilla electrónica Fósforo Fotoconductividad Propiedad electrónica Recocido Red neuronal Silicio Estructura electrónica Temperatura recocido
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G03 Neural networks
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 17891585
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mssp.2006.01.078 
https://dx.doi.org/10.1016/j.mssp.2006.01.078
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