Fabrication of FinFETs by damage-free neutral-beam etching technology
- Author
- ENDO, Kazuhiko1 ; NODA, Shuichi2 ; MATSUKAWA, Takashi1 ; TAKASHIMA, Hidenori1 ; YAMAUCHI, Hiromi1 ; SUZUKI, Eiichi1 ; MASAHARA, Meishoku1 ; KUBOTA, Tomohiro2 ; OZAKI, Takuya2 ; SAMUKAWA, Seiji2 ; YONGXUN LIU1 ; ISHII, Kenichi1 ; ISHIKAWA, Yuki1 ; SUGIMATA, Etsuro1
[1] National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568, Japan
[2] Institute of Fluid Science, Tohoku University, Sendai 980-8557, Japan - Source
I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 8, pp 1826-1833, 8 p ; ref : 19 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Carrier mobility damaged-free double-gate MOSFET (DG-MOSFET) neutral beam (NB) utrathin-channel fabrication
- Keyword (fr)
- Canal vertical Couche ultramince Détérioration par rayonnement Electronique faible puissance Endommagement Evaluation performance Fabrication microélectronique Gravure ionique réactive Mobilité porteur charge Mobilité électron Rapport aspect Technologie MOS complémentaire Technologie autoalignée Transistor MOSFET Transistor grille double
- Keyword (en)
- Vertical channel Ultrathin films Radiation damage Low-power electronics Damaging Performance evaluation Microelectronic fabrication Reactive ion etching Charge carrier mobility Electron mobility Aspect ratio Complementary MOS technology Self aligned technology MOSFET Dual gate transistor
- Keyword (es)
- Canal vertical Deteriorización por irradiación Deterioración Evaluación prestación Fabricación microeléctrica Grabado iónico reactivo Movilidad portador carga Movilidad electrón Relación dimensional Tecnología MOS complementario Tecnología rejilla autoalineada Transistor de compuerta doble
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 17998170
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2006.877035 
https://dx.doi.org/10.1109/TED.2006.877035
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