Structural properties of ultra-low-energy ion- implanted silicon studied by combined X-ray scattering methods
- Author
- CAPELLO, L1 2 ; METZGER, T. H1 ; HOFF, V3 ; SERVIDORI, M4 ; MALACHIAS, A1 5
[1] ESRF, 6, Rue Horowitz, 38043, Grenoble, France
[2] CEA, 17, Rue des Martyrs, 38054, Grenoble, France
[3] Charles University, Ke Karlovu 5, 12116, Praha, Czech Republic
[4] CNR-IMM Sez. di Bologna, 101, Via Gobetti, 40129, Bologna, Italy
[5] Laboratorio Nacional de Luz Sfncrotron, C.P. 6192, Campinas, Brazil - Source
Journal of applied crystallography. 2006, Vol 39, pp 571-581, 11 p ; 4 ; ref : 35 ref
- CODEN
- JACGAR
- ISSN
- 0021-8898
- Scientific domain
- Crystallography
- Publisher
- Blackwell, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Couche mince Densité électron Diffraction RX Diffusion RX Diffusion en diffraction Distribution contrainte Etat amorphe Etude expérimentale Formation défaut Implantation ion Incidence rasante Rayonnement synchrotron Réflexion Bragg Réflexion spéculaire Semiconducteur Silicium Simulation numérique 6172T Si Composé minéral
- Keyword (en)
- Thin films Electron density XRD X-ray scattering Diffuse scattering Stress distribution Amorphous state Experimental study Defect formation Ion implantation Grazing incidence Synchrotron radiation Bragg reflection Specular reflection Semiconductor materials Silicon Digital simulation Inorganic compounds
- Keyword (es)
- Formación defecto Incidencia rasante Reflexión especular
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72T Doping and impurity implantation in germanium and silicon
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18012894
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1107/S0021889806018917 
https://dx.doi.org/10.1107/S0021889806018917
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