Experimental evidence of two conduction mechanisms for direct tunnelling stress-induced leakage current through ultrathin silicon dioxide gate dielectrics
- Author
- SAMANTA, Piyas1 ; TSZ YIN MAN1 ; CHAN, Alain Chun Keung1 ; QINGCHUN ZHANG2 ; CHUNXIANG ZHU2 ; MANSUN CHAN1
[1] Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay Road, Kowloon, Hong-Kong
[2] Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore, 119260, Singapore - Source
Semiconductor science and technology. 2006, Vol 21, Num 10, pp 1393-1401, 9 p ; ref : 24 ref
- CODEN
- SSTEET
- ISSN
- 0268-1242
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Analyse contrainte Condensateur MOS Contrainte électrique Couche ultramince Courant fuite Effet contrainte Effet tunnel Evaluation performance Grille transistor Génération porteur charge Oxyde grille Piégeage porteur charge Régime permanent
- Keyword (en)
- Stress analysis MOS capacitor Electric stress Ultrathin films Leakage current Stress effects Tunnel effect Performance evaluation Transistor gate Charge carrier generation Gate oxide Charge carrier trapping Steady state
- Keyword (es)
- Análisis tensión Capacidad MOS Tensión eléctrica Corriente escape Efecto túnel Evaluación prestación Rejilla transistor Generación portador carga Oxido rejilla Captura portador carga Régimen permanente
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F09 Dielectric, amorphous and glass solid devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18172418
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0268-1242/21/10/004 
https://dx.doi.org/10.1088/0268-1242/21/10/004
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