0.15-μm-Gate InAlAs/InGaAs/InP E-HEMTs utilizing Ir/Ti/Pt/Au gate structure
- Author
- KIM, Seiyon1 ; ADESIDA, Ilesanmi1
[1] Micro and Nanotechnology Laboratory and the Department of Electrical and Computer Engineering, University of Illinois, Urbana-Champaign, IL 61801, United States - Source
IEEE electron device letters. 2006, Vol 27, Num 11, pp 873-876, 4 p ; ref : 10 ref
- CODEN
- EDLEDZ
- ISSN
- 0741-3106
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Enhancement-mode high-electron mobility transistor (E-HEMT) InP E-HEMT iridium gate
- Keyword (fr)
- Barrière Schottky Caractéristique électrique Courant continu Courant intense Dégradation thermique Encapsulation Endommagement Fabrication microélectronique Fréquence coupure Fréquence oscillation Gain courant Hauteur barrière Hétérostructure Mode enrichissement Métallisation Packaging électronique Recuit Seuil tension Transistor mobilité électron élevée
- Keyword (en)
- Schottky barrier Electrical characteristic Direct current High strength current Thermal degradation Encapsulation Damaging Microelectronic fabrication Cut off frequency Oscillation frequency Current gain Barrier height Heterostructures Enhancement mode Metallizing Electronic packaging Annealing Voltage threshold High electron mobility transistor
- Keyword (es)
- Barrera Schottky Característica eléctrica Corriente contínua Corriente intensa Degradación térmica Encapsulación Deterioración Fabricación microeléctrica Frecuencia corte Frecuencia oscilación Ganancia corriente Altura barrera Modo enriquecimiento Metalización Packaging electrónico Recocido Umbral tensión Transistor movibilidad elevada electrones
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F06 Integrated circuits / 001D03F06A Design. Technologies. Operation analysis. Testing
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18256257
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/LED.2006.883563 
https://dx.doi.org/10.1109/LED.2006.883563
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