Temperature homogeneity of polysilicon rods in a Siemens reactor
- Author
- DEL COSO, G1 ; TOBIAS, I1 ; CANIZO, C1 ; LUQUE, A1
[1] Instituto de Energía Solar, Universidad Politécnica de Madrid, E.T.S.I. Telecomunicación, Ciudad Universitaria, 28040 Madrid, Spain - Source
Journal of crystal growth. 2007, Vol 299, Num 1, pp 165-170, 6 p ; ref : 17 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- 40/44 A1. Heat transfer; A1. Magnetic fields; A2. Siemens process; B2. Semiconducting silicon
- Keyword (fr)
- Champ magnétique Champ température Croissance cristalline Densité courant Equation différentielle Facteur réflexion Méthode phase fondue Polycristal Semiconducteur Silicium polycristallin Traitement thermique Transfert chaleur 8110F Si
- Keyword (en)
- Magnetic fields Temperature distribution Crystal growth Current density Differential equations Reflectivity Growth from melt Polycrystals Semiconductor materials Polysilicon Heat treatments Heat transfer
- Keyword (es)
- Método fase fundida Silicio policristal
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10F Growth from melts; zone melting and refining
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18522171
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.jcrysgro.2006.12.004 
https://dx.doi.org/10.1016/j.jcrysgro.2006.12.004
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