Probing into the asymmetric nature of electromigration performance of submicron interconnect via structure
- Author
- ROY, Arijit1 ; CHER MING TAN1
[1] School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639 798, Singapore - Source
Thin solid films. 2007, Vol 515, Num 7-8, pp 3867-3874, 8 p ; ref : 31 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Article
- Language
- English
- Author keyword
- Copper Driving forces Electromigration Finite element analysis
- Keyword (fr)
- Asymétrie Cavité dans réseau Cuivre Densité courant Distribution contrainte Défaut cristallin Electrodiffusion Méthode élément fini 6172Q
- Keyword (en)
- Asymmetry Voids Copper Current density Stress distribution Crystal defects Electrodiffusion Finite element method
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72Q Microscopic defects (voids, inclusions, etc.)
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18534810
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2006.10.124 
https://dx.doi.org/10.1016/j.tsf.2006.10.124
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