Mechanism of via failure in copper/organosilicate glass interconnects induced by oxidation
- Author
- WOO SIG MIN1 ; DONG JOON KIM1 ; SUNG GYU PYO1 ; SANG JONG PARK1 ; JIN TAE CHOI2 ; KIM, Sibum1
[1] R&D Center, MagnaChip Semiconductor #1 Hyangjeong-dong, Hungduk-gu, Cheongju-si, 361-725, Korea, Republic of
[2] R&D Center Hynix Semiconductor, #I Hyangjeong-dong, Hungduk-gu, Cheongju-si, 361-725, Korea, Republic of - Source
Thin solid films. 2007, Vol 515, Num 7-8, pp 3875-3880, 6 p ; ref : 12 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Article
- Language
- English
- Author keyword
- Annealing Copper interconnect Organosilicate glass (OSG) Via resistance
- Keyword (fr)
- Cavité dans réseau Couche mince Cuivre Défaut cristallin Dépôt physique phase vapeur Interface Oxydation Recuit thermique Verre 6172Q 8115C
- Keyword (en)
- Voids Thin films Copper Crystal defects Physical vapor deposition Interfaces Oxidation Thermal annealing Glass
- Keyword (es)
- Recocido térmico
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72Q Microscopic defects (voids, inclusions, etc.)
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15C Deposition by sputtering
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18534811
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2006.10.109 
https://dx.doi.org/10.1016/j.tsf.2006.10.109
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