Relativistic full-potential photoemission for GaAs(110)
- Author
- FLUCHTMANN, M1 ; DER KELLEN, S. B1 ; BRAUN, J1 ; BORSTEL, G1
[1] Department of Physics, University of Osnabrück, 49069 Osnabrück, Germany - Source
Surface science. 1999, Vol 432, Num 3, pp 291-296 ; ref : 46 ref
- Publisher
- Elsevier Science, Amsterdam
/
Elsevier Science, Lausanne
/
Elsevier Science, New York, NY
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Calcul KKR Etat surface Etude théorique Gallium arséniure Matériau semiconducteur Photoémission Structure bande As Ga GaAs
- Keyword (en)
- KKR calculations Surface states Theoretical study Gallium arsenides Semiconductor materials Photoemission Band structure
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C20 Surface and interface electron states / 001B70C20A Surface states, band structure, electron density of states
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70I Electron and ion emission by liquids and solids; impact phenomena / 001B70I60 Photoemission and photoelectron spectra / 001B70I60B Clean metal, semiconductor, and insulator surfaces
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1866247
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0039-6028(99)00606-8 
https://dx.doi.org/10.1016/S0039-6028(99)00606-8
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