Fabrication and application of MOS-HBT-NDR circuit using standard SiGe process
- Author
- GAN, K.-J1 ; TSAI, C.-S1 ; SUN, W.-L1
[1] Department of Electronic Engineering, Kun Shan University, Taiwan, Province of China - Source
Electronics Letters. 2007, Vol 43, Num 9, pp 516-517, 2 p ; ref : 6 ref
- CODEN
- ELLEAK
- ISSN
- 0013-5194
- Scientific domain
- Electronics; Optics; Telecommunications
- Publisher
- Institution of Electrical Engineers, London
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Alliage semiconducteur Circuit MOS Conductivité différentielle négative Onduleur Structure MOS Transistor MOSFET Transistor bipolaire hétérojonction
- Keyword (en)
- Semiconductor alloys MOS circuit Negative differential conductivity Inverter MOS structure MOSFET Heterojunction bipolar transistors
- Keyword (es)
- Circuito MOS Conductividad diferencial negativa Ondulador Estructura MOS
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03D Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 18716203
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1049/el:20070039 
https://dx.doi.org/10.1049/el:20070039
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