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Effects of residual stress on the electrical properties of PZT films

Author
LEE, Jae-Wung1 ; PARK, Chee-Sung1 ; KIM, Miyoung1 ; KIM, Hyoun-Ee1
[1] Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742, Korea, Republic of
Source

Journal of the American Ceramic Society. 2007, Vol 90, Num 4, pp 1077-1080, 4 p ; ref : 20 ref

CODEN
JACTAW
ISSN
0002-7820
Scientific domain
Chemical industry parachemical industry
Publisher
Blackwell, Malden,MA
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Composé minéral Contrainte résiduelle Couche mince Etude expérimentale Magnétron PZT Plomb Titanate Zirconate Propriété ferroélectrique Propriété piézoélectrique Propriété électrique Pulvérisation haute fréquence Relation fabrication propriété Titanate Traitement thermique Zirconate Pb(Zr0,52Ti0,48)O3
Keyword (en)
Inorganic compounds Residual stresses Thin films Experimental study Magnetrons PZT Lead Titanates Zirconates Ferroelectric properties Piezoelectric properties Electrical properties Radiofrequency sputtering Fabrication property relation Titanates Heat treatments Zirconates
Keyword (es)
Propiedad ferroeléctrica Propiedad piezoeléctrica Pulverización alta frecuencia Relación fabricación propiedad
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C61 Electrical properties of specific thin films / 001B70C61L Other inorganic semiconductors

Pacs
7361L Other inorganic semiconductors

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
18742462

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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