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Protons at the Si-SiO2 interface : a first principle investigation

Author
GODET, Julien; PASQUARELLO, Alfredo
[1] Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Theoretical Physics, 1015 Lausanne, Switzerland
[2] Institut Romand de Recherche Numérique en Physique des Matériaux (IRRMA), 1015 Lausanne, Switzerland
Conference title
INFOS 2007: Proceedings of the 15th Biennial Conference on Insulating Films on Semiconductors, June 20-23, 2007, Glyfada Athens, Greece
Conference name
INFOS 2007 Biennial Conference on Insulating Films on Semiconductors (15 ; Glyfada Athens 2007-06-20)
Author (monograph)
DIMOULAS, A (Editor)1 ; NORMAND, P (Editor)1
NCSR Demokritos, Athens, Greece (Organiser of meeting)
National Technical University of Athens, Athens, Greece (Organiser of meeting)
University of Ioannina, Ioannina, Greece (Organiser of meeting)
[1] NCSR Demokritos, Athens, Greece
Source

Microelectronic engineering. 2007, Vol 84, Num 9-10, pp 2035-2038, 4 p ; ref : 27 ref

CODEN
MIENEF
ISSN
0167-9317
Scientific domain
Electronics
Publisher
Elsevier Science, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Author keyword
Si-SiO2 interface defect proton
Keyword (fr)
Contact isolant semiconducteur Energie interface
Keyword (en)
Semiconductor insulator contact Interface energy
Keyword (es)
Contacto aislante semiconductor Energía interfase
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F01 Interfaces

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
18853504

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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